STP10NK50Z(2012) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
APPLICATIONs
■ Switching application
Part Name
Description
View
MFG CO.
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N-channel 500 V, 0.40 ?, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
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N-channel 500 V, 0.23 ?, 17 A SuperMESH? Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK ( Rev : 2009 )
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POWER MOSFETS IN A TO-3 PACKAGE
Omnirel Corp => IRF
POWER MOSFETS IN A TO-3 PACKAGE
Omnirel Corp => IRF
N-channel 600 V, 0.395 ? typ., 9 A MDmesh? M2 Power MOSFET in a TO-220 package
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N-channel 500 V, 0.40 ? typ., 8.5 A MDmesh? II Power MOSFET in a TO-220 package ( Rev : 2015 )
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N-channel 950 V, 1 ? typ., 9 A Zener-protected SuperMESH? 5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK
STMicroelectronics