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STP12N60M2 Datasheet - STMicroelectronics

STP12N60M2 image

Part Name
STP12N60M2

Other PDF
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page
13 Pages

File Size
384.3 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.


FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications


Part Name
Description
View
MFG CO.
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N-channel 600 V, 60 m? typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.255 ? typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.55 ? typ., 7.5 A MDmesh? M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 1.3 ? typ., 3.5 A MDmesh? M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.06 ? typ., 42 A MDmesh? M2 Power MOSFET in a TO-247 package ( Rev : 2017 )
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N-channel 600 V, 165 m? typ., 18 A, MDmesh DM6 Power MOSFET in a TO?220 package
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N-channel 600 V, 60 m? typ., 42 A MDmesh M2 Power MOSFET in a TO247?4 package
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STMicroelectronics

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