Description
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
FEATUREs
■ DPAK 950 V worldwide best RDS(on)
■ Worldwide best FOM (figure of merit)
■ Ultra low gate charge
■ 100% avalanche tested
■ Zener-protected
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 950 V, 3 ? typ., 4 A Zener-protected SuperMESH3? Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 950 V, 1 ? typ., 9 A MDmesh? K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages
STMicroelectronics
N-channel 950 V, 0.68 ? typ., 10 A Zener-protected SuperMESH3? Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247
STMicroelectronics
N-channel 950 V, 0.65 ? typ., 8 A Zener-protected SuperMESH? 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 800 V, 3.5 ? typ., 2 A Zener-protected SuperMESH? 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2014 )
STMicroelectronics
N-channel 800 V, 2.8 ? typ., 2.5 A Zener-protected SuperMESH? 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2014 )
STMicroelectronics
N-channel 950 V, 1.1 ?, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3? Power MOSFET
STMicroelectronics
N-channel 950 V, 2 ? typ., 3.5 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 800 V, 2.1 ? typ., 3 A Zener-protected SuperMESH? 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2013 )
STMicroelectronics
N-channel 950 V, 0.41 ? typ., 12 A SuperMESH? 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics