Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
FEATUREs
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 60 V, 0.0024 ?, 120 A STripFET? VI DeepGATE? Power MOSFET in TO-220 and IPAK packages
STMicroelectronics
Automotive-grade N-channel 40 V, 4.3 m? typ., 120 A STripFET? II Power MOSFET in a DPAK and TO-220 ( Rev : 2016 )
STMicroelectronics
N-channel 650 V, 0.056 ? typ., 42 A MDmesh? V Power MOSFET in IPAK, TO-220, TO-220FP and DPAK packages
STMicroelectronics
N-channel 525 V, 0.41 ?, 10 A SuperMESH3? Power MOSFET in DPAK,TO-220FP and TO-220 packages
STMicroelectronics
N-channel 100 V, 7.8 m? typ., 120 A STripFET?III Power MOSFET in TO-220FP, IPAKFP, HPAK-2 and TO-220 packages
STMicroelectronics
N-channel 500 V, 300 m? typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packages ( Rev : 2020 )
STMicroelectronics
N-channel 800 V, 0.25 ?, 17 A, MDmesh? Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 110 m? typ., 24 A MDmesh DM2 Power MOSFET in DPAK, TO?220 and TO?247 packages
STMicroelectronics
N-channel 60 V, 0.015 ?, 50 A STripFET? II Power MOSFET in DPAK, TO-220 and TO-220FP packages ( Rev : 2012 )
STMicroelectronics
N-channel 650 V, 0.087 ? typ., 32 A MDmesh? M2 Power MOSFET in IPAK and TO-220 packages
STMicroelectronics