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STB33N60DM2 Datasheet - STMicroelectronics

STB33N60DM2 image

Part Name
STB33N60DM2

Other PDF
  2015  

PDF
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page
20 Pages

File Size
551.7 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.


FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected


APPLICATIONs
• Switching applications


Part Name
Description
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