STFW3N170 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
FEATUREs
• Intrinsic capacitances and Qg minimized
• TO-3PF for higher creepage between leads
• High speed switching
• 100% avalanche tested
APPLICATIONs
• Switching applications
Part Name
Description
View
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N-channel 650 V, 0.037 ? typ., 58 A MDmesh? V Power MOSFET in TO-3PF and TO-247 packages
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N-channel 600 V, 165 m? typ., 18 A, MDmesh DM6 Power MOSFET in a TO?220 package
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N-channel 600 V, 0.150 ? typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
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N-channel 500 V, 0.08 ? typ., 45 A MDmesh? Power MOSFET in a TO-247 package ( Rev : 2016 )
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N-channel 600 V, 60 m? typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
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N-channel 650 V, 39 m? typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package
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N-channel 600 V, 165 m? typ., 18 A, MDmesh DM6 Power MOSFET in a TO?220FP package
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