Part Name
STB85NF55T4
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MFG CO.
STMicroelectronics
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STB85NF55T4(2019) Datasheet - STMicroelectronics
STMicroelectronics
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
FEATUREs
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 55 V, 0.0065 ? typ., 78 A STripFET? II Power MOSFETs in DPAK and TO-220 packages
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Automotive-grade N-channel 600 V, 0.8 ? typ., 5 A MDmesh? II Power MOSFETs in DPAK and DPAK packages
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N-channel 600 V, 0.4 ? typ., 11 A, MDmesh? II Power MOSFETs in DPAK and TO-220 packages ( Rev : 2018 )
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N-channel 300 V, 0.063 ? typ., 42 A STripFET? II Power MOSFETs in DPAK, TO-220 and TO-247 packages
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N-channel 600 V, 280 m? typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, IPAK, TO-220 and IPAK packages ( Rev : 2020 )
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N-channel 600 V, 0.20 ? typ., 16 A MDmesh? II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 500 V, 0.28 ? typ., 12 A MDmesh? II Power MOSFETs in TO-220FP, IPAK and TO-220 packages ( Rev : 2014 )
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N-channel 100 V, 9.0 m? typ., 110 A STripFET? II Power MOSFETs in DPAK, TO-220 and TO-247 packages ( Rev : 2017 )
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Automotive-grade N-channel 40 V, 4.3 m? typ., 120 A STripFET? II Power MOSFET in a DPAK and TO-220 ( Rev : 2016 )
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