Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 280 m? typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, IPAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-channel 600 V, 0.28 ? typ., 11 A MDmesh? II Power MOSFETs in DPAK and DPAK packages
STMicroelectronics
N-channel 600 V, 0.20 ? typ., 16 A MDmesh? II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.145 ? typ., 21 A, FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.13 ? typ., 23 A FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.35 ? typ., 11 A MDmesh II Plus? low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.092 ?, 31.5 A MDmesh? II Power MOSFETs in DPAK and TO-220 packages
STMicroelectronics
N-channel 600 V, 0.28 ? typ., 11 A MDmesh? II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packages
STMicroelectronics
N-channel 55 V, 0.0065 ? typ., 78 A STripFET? II Power MOSFETs in DPAK and TO-220 packages
STMicroelectronics