Part Name
STB33N60DM2
Description
Other PDF
PDF
page
20 Pages
File Size
1.1 MB
MFG CO.
STMicroelectronics
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STB33N60DM2(2015) Datasheet - STMicroelectronics
STMicroelectronics
Description
These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
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