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STB155N3H6 Datasheet - STMicroelectronics

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Part Name
STB155N3H6

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18 Pages

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919.9 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages.


FEATUREs
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness


APPLICATION
■ Switching applications
■ Automotive

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