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STU95N3LLH6 Datasheet - STMicroelectronics

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Part Name
STU95N3LLH6

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18 Pages

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930.3 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
   This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R S(on) in all packages.


FEATUREs
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses


APPLICATION
■ Switching applications


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