STB230NH03L(2011) Datasheet - STMicroelectronics

Description
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.

FEATUREs
■ RDS(on) Qg industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device

APPLICATIONs
■ Switching applications
   – Specifically designed and optimized for
      high efficiency DC/DC converters
■ OR-ing