Part Name
10P6F6
Description
Other PDF
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page
15 Pages
File Size
466.7 kB
MFG CO.
STMicroelectronics
10P6F6(2012) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are P-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
FEATUREs
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
APPLICATIONs
■ Switching applications
Part Name
Description
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