Part Name
11N65M2
Description
Other PDF
no available.
PDF
page
27 Pages
File Size
714.6 kB
MFG CO.
STMicroelectronics
11N65M2(2019) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 600 V, 1.3 ? typ., 3.5 A, MDmesh? M2 Power MOSFETs in DPAK, TO-220 and IPAK packages
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N-channel 650 V, 1.2 ? typ., 4 A MDmesh? M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
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N-channel 650 V, 0.79 ? typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 PAK packages
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N-channel 650 V, 0.79 ? typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 PAK packages ( Rev : 2014 )
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