Part Name
10P6F6
Other PDF
PDF
page
24 Pages
File Size
1.1 MB
MFG CO.
STMicroelectronics
10P6F6 Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
FEATUREs
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
APPLICATIONs
• Switching applications
Part Name
Description
View
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