STL160N3LLH6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STL160N3LLH6

N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET

STMicroelectronics 

STL160N3LLH6

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

VGS

(V)

12

VDD=15V

ID=35A

10

8

6

AM08604v1

C (pF)

9000

8000

7000

6000

5000

4000

AM08605v1

Ciss

4

2

0

0 20 40 60 80 100 120 Qg(nC)

3000

2000

1000

0

0

Coss

Crss

5 10 15 20 25 30 VDS(V)

Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.2

1.0

AM08606v1

RDS(on)

(norm)

1.8

1.6

1.4

AM08607v1

0.8

1.2

0.6

0.4

0.2

-75 -25 25 75 125 175 TJ(°C)

1.0

0.8

0.6

0.4

-75 -25 25 75 125 175 TJ(°C)

Figure 12. Source-drain diode forward

characteristics

VSD

(V)

1.0

AM08608v1

TJ=-55°C

0.9

0.8

TJ=25°C

0.7

0.6

TJ=175°C

0.5

0.4

0

5 10 15 20 25 30 35 ISD(A)

Doc ID 18223 Rev 2

7/16

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