STL160N3LLH6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STL160N3LLH6

N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STL160N3LLH6

(TCASE = 25 °C unless otherwise specified).

Table 5. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

30

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V,

VDS = 30 V at TC = 125 °C

1

µA

10 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±100 nA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250 µA

1

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 17.5 A

VGS= 4.5 V, ID= 17.5 A

0.0011 0.0013 Ω

0.0016 0.0020 Ω

Table 6. Dynamic

Symbol

Parameter

Ciss

Coss

Crss

Qg

Qgs

Qgd

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

RG Gate input resistance

Test conditions

Min. Typ. Max. Unit

VDS = 25 V, f=1 MHz,

VGS=0

6375

pF

- 1230 -

pF

675

pF

VDD=15 V, ID = 35 A

VGS =4.5 V

(see Figure 14)

61.5

nC

-

20

-

nC

24

nC

f=1 MHz gate DC bias = 0

test signal level = 20 mV

- 1.4

-

Ω

open drain

4/16

Doc ID 18223 Rev 2

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