STL160N3LLH6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STL160N3LLH6

N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET

STMicroelectronics 

STL160N3LLH6

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD=15 V, ID= 17.5 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

Min. Typ. Max. Unit

18.5

ns

32

ns

-

-

107.5

ns

54

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 35 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 35 A,

di/dt = 100 A/µs,

VDD=25 V

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration=300µs, duty cycle 1.5%.

Min. Typ. Max. Unit

-

35 A

-

140 A

-

1.1 V

37.2

ns

-

36

nC

1.9

A

Doc ID 18223 Rev 2

5/16

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