STL160N3LLH6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL160N3LLH6
STMicroelectronics
STL160N3LLH6 Datasheet PDF : 16 Pages
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STL160N3LLH6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID(1)
ID (1)
ID(2)
ID (2)
IDM(3)
PTOT (1)
PTOT (3)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (continuous) at Tpcb = 25 °C
Drain current (continuous) at Tpcb=100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Total dissipation at Tpcb = 25 °C
Derating factor
Tj
Operating junction temperature
Tstg
Storage temperature
1. The value is rated according to Rthj-c .
2. The value is rated according to Rthj-pcb.
3. Pulse width limited by safe operating area.
Value
30
± 20
160
100
35
21.8
140
80
4
0.03
-55 to 150
Unit
V
V
A
A
A
A
A
W
W
W/°C
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case (drain, steady state)
Rthj-pcb (1) Thermal resistance junction-ambient
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Value
1.56
31.3
Unit
°C/W
°C/W
Table 4. Avalanche data
Symbol
Parameter
Not-repetitive avalanche current,
IAV
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID = IAV )
Value
Unit
35
A
900
mJ
Doc ID 18223 Rev 2
3/16
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