零件编号
STW40N60M2
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STW40N60M2(2014) 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• LLC converters, resonant converters
零件编号
产品描述 (功能)
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生产厂家
N-channel 600 V, 0.255 ? typ., 13 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.35 ? typ., 11 A MDmesh II Plus? low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.175 ? typ., 18 A FDmesh II Plus? low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.108 ? typ., 26 A MDmesh II Plus? low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.078 ? typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages
STMicroelectronics
N-channel 600 V, 0.255 ? typ., 13 A MDmesh M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.085 ? typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.076 ? typ., 34 A MDmesh? M2 EP Power MOSFETs in DPAK, TO-220 and TO-247 packages
STMicroelectronics
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