零件编号
STB24N60M2
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21 Pages
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1.5 MB
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STMicroelectronics
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STB24N60M2(2014) 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
视图
生产厂家
N-channel 600 V, 0.255 ? typ., 13 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.135 ? typ., 20 A MDmesh? II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in TO-220FP and I2PAKFP packages
STMicroelectronics
N-channel 600 V, 0.108 ? typ., 26 A MDmesh II Plus? low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 600 V, 0.078 ? typ., 34 A MDmesh II Plus? low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.175 ? typ., 18 A FDmesh II Plus? low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.160 ? typ., 18 A MDmesh? V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ?, 17 A MDmesh? II Power MOSFET TO-220FP, I2PAK, TO-220 and TO-247 ( Rev : 2011 )
STMicroelectronics
N-channel 600 V, 0.255 ? typ., 13 A MDmesh M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packages
STMicroelectronics
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