Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
■ Worldwide best RDS(on) * area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
APPLICATIONs
■ Switching applications
N-channel 650 V, 0.095 ?, 24 A, MDmesh? V Power MOSFET in DPAK, IPAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.230 ?, 12 A MDmesh? V Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247
STMicroelectronics
N-channel 650 V, 0.085 ?, 27 A, MDmesh? V Power MOSFET in DPAK, TO-220FP, IPAK, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.150 ?, 17 A MDmesh? V Power MOSFET DPAK, TO-220FP, TO-220, IPAK, TO-247
STMicroelectronics
N-channel 620 V, 1.28 ?, 4.2 A SuperMESH3? Power MOSFET DPAK, DPAK,TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 650 V, 0.056 ? typ., 42 A MDmesh? V Power MOSFET in IPAK, TO-220, TO-220FP and DPAK packages
STMicroelectronics
N-channel 650 V, 0.125 ?, 22 A, MDmesh? V Power MOSFET DPAK, TO-220FP, IPAK, TO-220, TO-247
STMicroelectronics
N-channel 525 V, 1.2 ?, 4.4 A SuperMESH3? Power MOSFET DPAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics
N-channel 600 V - 0.56 ? - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh? Power MOSFET ( Rev : 2008_01 )
STMicroelectronics
N-channel 550 V, 0.18 ?, 13 A, MDmesh? V Power MOSFET in DPAK, DPAK, TO-220FP and TO-220
STMicroelectronics