Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
Features
■ 100% avalanche tested
■ Extremely large avalanche performance
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Application
Switching applications
N-channel 620 V, 2.5 ? , 2.5 A SuperMESH3? Power MOSFET DPAK, TO-220FP, TO-220, IPAK
STATEK CORPORATION
N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3? Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics
N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3? Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK ( Rev : 2009 )
STMicroelectronics
N-channel 620 V, 2.5 ? , 2.5 A SuperMESH3? Power MOSFET DPAK, TO-220FP, TO-220,
STMicroelectronics
N-channel 650 V, 0.56 ?, 7 A MDmesh? V Power MOSFET in DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAK
STMicroelectronics
N-channel 525 V, 1.2 ?, 4.4 A SuperMESH3? Power MOSFET DPAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics
N-channel 620 V, 1.7 ? typ., 3.8 A SuperMESH3? Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 and IPAK packages
STMicroelectronics
N-channel 800 V, 0.95 ?, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh? Power MOSFET ( Rev : 2009 )
STMicroelectronics
N-channel 650 V, 0.56 ? typ., 7 A MDmesh? V Power MOSFET in DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAK packages ( Rev : 2012 )
STMicroelectronics
N-channel 620 V, 0.95 ? typ., 5.5 A SuperMESH3? Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220, IPAK packages
STATEK CORPORATION