零件编号
PD85025C
Other PDF
PDF
page
11 Pages
File Size
183.2 kB
生产厂家
STMicroelectronics
PD85025C 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
The PD85025C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85025C’s superior linearity performance makes it an ideal solution for mobile applications.
FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V
■ BeO free package
■ ESD protection
■ In compliance with the 2002/95/EC european directive
零件编号
产品描述 (功能)
视图
生产厂家
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
STMicroelectronics
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
STMicroelectronics
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
STMicroelectronics
RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs ( Rev : 2011 )
STMicroelectronics
RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2008 )
STMicroelectronics
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2010 )
STMicroelectronics
Share Link: 