PD57018-E(2007) 数据手册 ( 数据表 ) - STMicroelectronics

Description
The PD57018 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1 GHz. PD57018 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57018’s superior linearity performance makes it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294)

FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 18W with 16.5dB gain @ 945MHz /28V
■ New RF plastic package