PD84008L-E(2011) 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package, PowerFLAT™.
FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european directive
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
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RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2008 )
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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2010 )
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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2010_05 )
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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs ( Rev : 2006 )
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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
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RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2012 )
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RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2012 )
STMicroelectronics