M29DW128F(2005) 数据手册 ( 数据表 ) - STMicroelectronics

Summary description
   The M29DW128F is a 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memory defaults to its Read mode.

   The M29DW128F features an asymmetrical block architecture, with 16 parameter and 254 main blocks, divided into four Banks, A, B, C and D, providing multiple Bank operations. While programming or erasing in one bank, read operations are possible in any other bank. The bank architecture is summarized in Table 2. Eight of the Parameter Blocks are at the top of the memory address space, and eight are at the bottom.