M29DW128F 数据手册 ( 数据表 ) - Numonyx -> Micron

Summary description
   The M29DW128F is a 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memory defaults to its Read mode.

FEATURE summary
◾ Supply voltage
   – VCC = 2.7V to 3.6V for Program, Erase and
      Read
   – VPP =12V for Fast Program (optional)
◾ Asynchronous Random/Page Read
   – Page width: 8 Words
   – Page access: 25, 30ns
   – Random access: 60, 70ns
◾ Programming time
   – 10µs per Byte/Word typical
   – 4 Words / 8 Bytes Program
   – 32-Word Write Buffer
◾ Erase Verify
◾ Memory blocks
   – Quadruple Bank Memory Array:
      16Mbit+48Mbit+48Mbit+16Mbit
   – Parameter Blocks (at Top and Bottom)
◾ Dual Operation
   – While Program or Erase in one bank, Read
      in any of the other banks
◾ Program/Erase Suspend and Resume modes
   – Read from any Block during Program
      Suspend
   – Read and Program another Block during
      Erase Suspend
◾ Unlock Bypass Program
   – Faster Production/Batch Programming
◾ Common Flash Interface
   – 64 bit Security Code
◾ 100,000 Program/Erase cycles per block
◾ Low power consumption
   – Standby and Automatic Standby
◾ Hardware Block Protection
   – VPP/WP Pin for fast program and write
      protect of the four outermost parameter
      blocks
◾ Security features
   – Standard Protection
   – Password Protection
◾ Extended Memory Block
   – Extra block used as security block or to
      store additional information
◾ Electronic Signature
   – Manufacturer Code: 0020h
   – Device Code: 227Eh + 2220h + 2200h
◾ ECOPACK® packages available