2STD1665T4(2011) 数据手册 ( 数据表 ) - STMicroelectronics

Description
The device is a low voltage NPN transistor with exceptional high gain performance coupled with very low saturation voltage. It is designed in planar technology with "base island" layout.

FEATUREs
■ Very low collector to emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed

APPLICATIONs
■ Voltage regulators
■ High efficiency low voltage switching applications