2STD1665T4(2006) 数据手册 ( 数据表 ) - STMicroelectronics

Description
The device is manufactured in NPN Planar Technology by using a “Base Island” layout.
The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

General features
■ Very low collector to emitter saturation
   volatage
■ High current gain characteristic fast-switching
   speed
■ Through-hole IPAK (TO-251) power package
   in tube (suffix”-1”)
■ Surface mounting DPAK (TO-252) power
   package in tape & reel (suffix”T4”)

APPLICATIONs
■ Ccfl drivers
■ Voltage regulators
■ Relay drivers
■ High efficiency low voltage switching
   applications