2STC5949 数据手册 ( 数据表 ) - STMicroelectronics

Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

FEATUREs
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2STA2121
■ Fast-switching speed
■ Typical ft = 25 MHz
■ Fully characterized at 125 °C

APPLICATIONs
■ Audio power amplifier