2SC5200 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
FEATUREs
■ High breakdown voltage VCEO = 230 V
■ Typical fT = 30 MHz
APPLICATION
■ Audio power amplifier
High power NPN epitaxial planar bipolar transistor ( Rev : 2008_11 )
STMicroelectronics
High power NPN epitaxial planar bipolar transistor
STMicroelectronics
High power NPN epitaxial planar bipolar transistor ( Rev : 2008_11 )
STMicroelectronics
High power NPN epitaxial planar bipolar transistor ( Rev : 2007 )
STMicroelectronics
High power NPN epitaxial planar bipolar transistor
STMicroelectronics
High power NPN epitaxial planar bipolar transistor
STMicroelectronics
High power NPN epitaxial planar bipolar transistor ( Rev : 2008_07 )
STMicroelectronics
High power NPN epitaxial planar bipolar transistor
STMicroelectronics
High power NPN epitaxial planar bipolar transistor ( Rev : 2007 )
STMicroelectronics
High power NPN epitaxial planar bipolar transistor
STMicroelectronics