M25P10-AMN6TP 查看數據表（PDF） - STMicroelectronics

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M25P10-AMN6TP

1 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface

STMicroelectronics 

DC and AC parameters

M25P10-A

Table 17. Instruction Times (Device Grade 3)

Test conditions specified in Table 10 and Table 12

Symbol Alt.

Parameter

Min. Typ.(1) (2) Max.(2) Unit

tW

tPP(3)

Write Status Register Cycle Time

Page Program Cycle Time (256 Bytes)

Page Program Cycle Time (n Bytes)

8

15

ms

1.5

0.4+

5

ms

n*1.1/256

tSE

Sector Erase Cycle Time

1

3

s

tBE

Bulk Erase Cycle Time

4.5

10

s

1. At 85°C

2. Preliminary data.

3. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are

obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤n ≤

256)

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