M25P10-AMN6TP 查看數據表（PDF） - STMicroelectronics

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M25P10-AMN6TP

1 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface

STMicroelectronics 

M25P10-A

DC and AC parameters

Table 15. DC Characteristics (Device Grade 3)

Symbol

Parameter

Test Condition (in addition to

those in Table 10)

Min(1)

Max(1) Unit

ILI Input Leakage Current

ILO Output Leakage Current

ICC1 Standby Current

ICC2 Deep Power-down Current

ICC3 Operating Current (READ)

ICC4 Operating Current (PP)

ICC5 Operating Current (WRSR)

ICC6 Operating Current (SE)

ICC7 Operating Current (BE)

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

VOH Output High Voltage

1. This is preliminary data.

± 2 µA

± 2 µA

S = VCC, VIN = VSS or VCC

S = VCC, VIN = VSS or VCC

C = 0.1VCC / 0.9.VCC at 25MHz,

Q = open

100 µA

50 µA

8

mA

C = 0.1VCC / 0.9.VCC at 20MHz,

Q = open

4

mA

S = VCC

S = VCC

S = VCC

S = VCC

IOL = 1.6mA

IOH = –100µA

15 mA

15 mA

15 mA

15 mA

– 0.5 0.3VCC V

0.7VCC VCC+0.4 V

0.4

V

VCC–0.2

V

Table 16. Instruction Times (Device Grade 6)

Test conditions specified in Table 10 and Table 12

Symbol Alt.

Parameter

Min. Typ. Max. Unit

tW

tPP (1)

Write Status Register Cycle Time

Page Program Cycle Time (256 Bytes)

Page Program Cycle Time (n Bytes)

5

15 ms

1.4

0.4+

5

ms

n*1/256

tSE

Sector Erase Cycle Time

tBE

Bulk Erase Cycle Time

0.8

3

s

2.5

6

s

1. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are

obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤n ≤

256)

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