M25P10-AMN6TP 查看數據表（PDF） - STMicroelectronics

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M25P10-AMN6TP

1 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface

STMicroelectronics 

M25P10-A

Power-up and Power-down

Figure 20. Power-up Timing

VCC

VCC(max)

Program, Erase and Write Commands are Rejected by the Device

Chip Selection Not Allowed

VCC(min)

Reset State

of the

Device

VWI

tVSL

Read Access allowed

Device fully

accessible

tPUW

Table 8. Power-Up Timing and VWI Threshold

Symbol

Parameter

tVSL(1)

tPUW(1)

VWI(1)

VWI(1)

VCC(min) to S low

Time delay to Write instruction

Write Inhibit Voltage (Device Grade 6)

Write Inhibit Voltage (Device Grade 3)

1. These parameters are characterized only.

time

AI04009C

Min.

10

1

1

1

Max. Unit

µs

10

ms

2

V

2.2

V

33/49

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