NAND04GA3C2N6E 查看數據表（PDF） - STMicroelectronics

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NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

12 DC and AC parameters

Figure 21. Block Erase AC Waveform

CL

E

tWLWL

(Write Cycle time)

W

tWHBL

AL

NAND04GA3C2A, NAND04GW3C2A

tBLBH3

(Erase Busy time)

R

I/O

60h

Add. Add. Add.

cycle 1 cycle 2 cycle 3

D0h

70h

SR0

RB

Block Erase

Setup Command

Block Address Input

Confirm

Code

Block Erase

Read Status Register

Figure 22. Reset AC Waveform

ai08038c

W

AL

CL

R

I/O

FFh

RB

tWHBH1

(Reset Busy time)

ai08043b

44/51

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