NAND04GA3C2N6E 查看數據表（PDF） - STMicroelectronics

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NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

NAND04GA3C2A, NAND04GW3C2A

Figure 20. Page Program AC Waveform

CL

E

tWLWL

(Write Cycle time)

W

tWLWL

AL

12 DC and AC parameters

tWLWL

tWHBL

tBLBH2

(Program Busy time)

R

I/O

80h

Add.N Add.N Add.N Add.N Add.N

cycle1 cycle 2 cycle 3 cycle 4 cycle 5

N

Last 10h

70h SR0

RB

Page Program

Setup Code

Address Input

Confirm

Code

Page

Data Input

Program Read Status Register

Ai11019

43/51

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