NAND04GA3C2N6E 查看數據表（PDF） - STMicroelectronics

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NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

12 DC and AC parameters

Figure 19. Page Read Operation AC Waveform

CL

NAND04GA3C2A, NAND04GW3C2A

E

tWLWL

W

tEHQZ

tWHBL

AL

tWHBH

tALLRL2

tRLRL

(Read Cycle time)

tRHQZ

R

tBLBH1

tRLRH

RB

I/O

00h

Add.N

cycle 1

Add.N

cycle 2

Add.N Add.N Add.N

cycle 3 cycle 4 cycle 5

30h

Data

N

Data

N+1

Data

N+2

Data

Last

Command Address N Input

Code

Data Output

Busy from Address N to Last Byte or Word in Page

Ai11018b

42/51

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