SC403BEVB 查看數據表（PDF） - Semtech Corporation

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SC403BEVB

6A EcoSpeed® Integrated FET Regulator with Programmable LDO

Semtech Corporation 

SC403B

Applications Information (continued)

If the inductor current does not reach zero on any switch-

ing cycle, the controller immediately exits power-save and

returns to forced continuous mode.

Figure 5 shows power-save operation at light loads.

FB Ripple

Voltage

(VFB)

Dead time varies

according to load

FB threshold

VOUT drifts up to due to leakage

current flowing into COUT

Smart Power Save

Threshold

FB

threshold

DH and DL off

High-side

Drive (DH)

Single DH on-time pulse

after DL turn-off

VOUT discharges via inductor

and low-side MOSFET

Normal VOUT ripple

Inductor

Current

Zero (0A)

On-time (TON)

DH On-time is triggered when

DH

VFB reaches the FB Threshold.

DL

DL drives high when on-time is completed.

DL remains high until inductor current reaches zero.

Figure 5 — PSAVE Operation

Smart PSAVE Protection

Active loads may leak current from a higher voltage into

the switcher output. Under light load conditions with

PSAVE enabled, this can force VOUT to slowly rise and reach

the over-voltage threshold, resulting in a hard shutdown.

Smart PSAVE prevents this condition. When the FB voltage

exceeds 10% above nominal, the device immediately dis-

ables PSAVE, and DL drives high to turn on the low-side

MOSFET. This draws current from VOUT through the induc-

tor and causes VOUT to fall. When VFB drops back to the

internal reference trip point, a normal tON switching cycle

begins. This method prevents a hard OVP shutdown and

also cycles energy from VOUT back to VIN. It also minimizes

operating power by avoiding forced conduction mode

operation. Figure 6 shows typical waveforms for the Smart

PSAVE feature.

Low-side

Drive (DL)

DL turns on when Smart

PSAVE threshold is reached

DL turns off when FB

threshold is reached

Normal DL pulse after DH

on-time pulse

Figure 6 — Smart PSAVE

SmartDriveTM

For each DH pulse the DH driver initially turns on the high-

side MOSFET at a lower speed, allowing a softer, smooth

turn-off of the low-side diode. Once the diode is off and

the LX voltage has risen 1V above PGND, the SmartDrive

circuit automatically drives the high-side MOSFET on at a

rapid rate. This technique reduces switching power loss

while maintaining high efficiency and also avoids the

need for snubbers or series resistors in the gate drive.

Current Limit Protection

Programmable current limiting is accomplished by using

the RDSON of the lower MOSFET for current sensing. The

current limit is set by the RILIM resistor. The RILIM resistor con-

nects from the ILIM pin to the LXS pin which is also the drain

of the low-side MOSFET. When the low-side MOSFET is on,

an internal ~10μA current flows from the ILIM pin and

through the RILIM resistor, creating a voltage drop across the

resistor. While the low-side MOSFET is on, the inductor

current flows through it and creates a voltage across the

RDSON. The voltage across the MOSFET is negative with

respect to ground. If this MOSFET voltage drop exceeds the

voltage across RILIM, the voltage at the ILIM pin will be nega-

tive and current limit will activate. The current limit then

keeps the low-side MOSFET on and will not allow another

high-side on-time, until the current in the low-side MOSFET

reduces enough to bring the ILIM voltage back up to zero.

This method regulates the inductor valley current at the

level shown by ILIM in Figure 7.

18

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