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STP6N80K5
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STMicroelectronics
STP6N80K5(2021) 데이터시트 - STMicroelectronics
STMicroelectronics
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
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제조사
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