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STD9N65M2
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STMicroelectronics
STD9N65M2(2014) 데이터시트 - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the devices exhibit both low on-resistance and optimized switching characteristics. They are therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
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제조사
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