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STF10N65K3(2012) 데이터시트 - STMicroelectronics

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STF10N65K3

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17 Pages

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ST-Microelectronics
STMicroelectronics 

Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.


FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery characteristics
■ Zener-protected


APPLICATIONs
■ Switching applications

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