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STF10N65K3
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STF10N65K3 데이터시트 - STMicroelectronics
STMicroelectronics
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
FEATUREs
• 100% avalanche tested
• Extremely low on-resistance RDS(on)
• Gate charge minimized
• Very low intrinsic capacitances
• Improved diode reverse recovery characteristics
• Zener-protected
APPLICATIONs
• Switching applications
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N-channel 800 V, 0.3 ? typ., 14 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages
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