Part Name
STY130NF20D
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MFG CO.
STMicroelectronics
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STY130NF20D Datasheet - STMicroelectronics
STMicroelectronics
Description
This Power MOSFET is produced using STMicroelectronics’ unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. The device offers extremely fast switching performance thanks to the intrinsic fast body diode, making the device ideal for hard switching topologies.
FEATUREs
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
APPLICATIONs
• Switching applications
Part Name
Description
View
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N-channel 600 V, 0.075 ? typ., 35 A FDmesh? II Power MOSFET (with fast diode) in a TO-247 package
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N-channel 650 V, 0.055 ? typ., 49 A FDmesh? II Power MOSFET (with fast diode) in a TO-247 package ( Rev : 2012 )
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N-channel 650 V, 0.055 ? typ., 49 A FDmesh? II Power MOSFET (with fast diode) in a TO-247 package
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N-channel 600 V, 0.150 ? typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
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N-channel 60 V, 0.22 ? typ., 38 A STripFET? II Power MOSFET in a D2PAK package ( Rev : 2012 )
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N-channel 100 V, 25 m? typ., 50 A, STripFET? II Power MOSFET in a DPAK package
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N-channel 650 V, 0.43 ? typ., 9 A MDmesh? II Power MOSFET in a DPAK package ( Rev : 2018 )
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Automotive-grade N-channel 600 V, 0.075 ? typ., 35 A FDmesh? II Power MOSFET (with fast diode) in a TO-247 package ( Rev : 2013 )
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