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STW54NM65ND(2012) Datasheet - STMicroelectronics

Part Name

STW54NM65ND

Description

N-channel 650 V, 0.055 Ω typ., 49 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package

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MFG CO.

STMicroelectronics

Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

FEATUREs
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities

APPLICATION
Switching applications

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Description

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STW48NM60N

N-channel 600 V, 0.055 ? typ., 44 A MDmesh? II Power MOSFET in a TO-247 package

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STW55NM60ND

N-channel 600 V, 0.047 ? typ., 51 A FDmesh? II Power MOSFET (with fast diode) in a TO-247 package

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