STW26NM50 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.
FEATUREs
■ High dv/dt and avalanche capabilities
■ Improved ESD capability
■ Low input capacitance and gate charge
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 500 V, 0.070 ?, 37 A MDmesh? II Power MOSFET TO-247
STMicroelectronics
Power MOSFET 14 Amps, 500 Volts N?Channel TO?247
ON Semiconductor
N-channel 500 V, 0.08 ? typ., 45 A MDmesh? Power MOSFET in a TO-247 package ( Rev : 2016 )
STMicroelectronics
N-channel 500 V, 0.40 ?, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
STMicroelectronics
N-channel 500 V, 0.035 ?, 68 A, MDmesh? II Power MOSFET in a TO-247 package
STMicroelectronics
16 A, 500 V N-CHANNEL POWER MOSFET
Unisonic Technologies
4 A, 500 V N-CHANNEL POWER MOSFET
Unisonic Technologies
N-channel 500 V, 0.2 ?, 14 A MDmesh? II Power MOSFET in TO-220FP, TO-220 and TO-247 ( Rev : 2010 )
STMicroelectronics
N-channel 500 V - 0.250 ? - 12 A MDmesh? II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK
STMicroelectronics
N-channel 500 V - 0.21 ? - 15 A MDmesh? II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
STMicroelectronics