STV300NH02L(2012) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
FEATUREs
■ RDS(on)*Qg industry’s benchmark
■ Conduction losses reduced
■ Low profile, very low parasitic inductance
■ Switching losses reduced
APPLICATIONs
■ Switching applications
– OR-ing
■ Specially designed and optimized for high efficiency DC/DC converters.
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