STB32N65M5(2018) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
FEATUREs
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
APPLICATIONs
• Switching applications
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Part Name
Description
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