Part Name
STP6NM60N
Other PDF
PDF
page
17 Pages
File Size
612.8 kB
MFG CO.
STMicroelectronics
STP6NM60N(2007) Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
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