Part Name
STB11NM60N-1
Description
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18 Pages
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MFG CO.
STMicroelectronics
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STB11NM60N-1(2007) Datasheet - STMicroelectronics
STMicroelectronics
Description
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 600V - 0.35? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh? Power MOSFET
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N-channel 600V - 0.270? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh? Power MOSFET
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N-channel 500V - 0.15? - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh? Power MOSFET
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N-channel 650V - 0.25? - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh? Power MOSFET
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N-channel 650V - 0.16? - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh? Power MOSFET
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N-channel 600V - 0.85? - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh? Power MOSFET ( Rev : 2007 )
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N-CHANNEL 600V - 0.19 ? - 17 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh? MOSFET ( Rev : 2005 )
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N-channel 600V - 0.140? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh? Power MOSFET ( Rev : 2007 )
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